IRLR024N Todos los transistores

 

IRLR024N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLR024N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: TO252
 

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IRLR024N Datasheet (PDF)

 ..1. Size:308K  international rectifier
irlr024npbf irlu024npbf.pdf pdf_icon

IRLR024N

PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni

 ..2. Size:162K  international rectifier
irlr024n.pdf pdf_icon

IRLR024N

PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes

 ..3. Size:241K  inchange semiconductor
irlr024n.pdf pdf_icon

IRLR024N

isc N-Channel MOSFET Transistor IRLR024N, IIRLR024NFEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

 0.1. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

IRLR024N

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

Otros transistores... IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , 18N50 , IRLR110A , IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 .

History: 2N5912 | IRF7105Q | CJAB60N03 | APT10M11JVR | FRK254D | J107 | FCB290N80

 

 
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