IRLR024N
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLR024N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15(max)
nC
trⓘ - Rise Time: 74
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO252
IRLR024N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLR024N
Datasheet (PDF)
..1. Size:308K international rectifier
irlr024npbf irlu024npbf.pdf
PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni
..2. Size:162K international rectifier
irlr024n.pdf
PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes
..3. Size:308K infineon
irlr024npbf irlu024npbf.pdf
PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni
..4. Size:241K inchange semiconductor
irlr024n.pdf
isc N-Channel MOSFET Transistor IRLR024N, IIRLR024NFEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-
0.1. Size:490K international rectifier
auirlr024n auirlu024n.pdf
AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com
0.2. Size:312K international rectifier
auirlr024ntr.pdf
PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual
7.2. Size:744K international rectifier
irlr024pbf irlu024pbf.pdf
PD- 96091IRLR024PbFIRLU024PbFHEXFET Power MOSFET Lead-FreeDescriptionAbsolute Maximum Ratings08/01/06Document Number: 91322 www.vishay.com1IRLR/U024PbFDocument Number: 91322 www.vishay.com2IRLR/U024PbFDocument Number: 91322 www.vishay.com3IRLR/U024PbFDocument Number: 91322 www.vishay.com4IRLR/U024PbFDocument Number: 91322 www.vishay.com5IRLR
7.3. Size:334K international rectifier
irlr024zpbf irlu024zpbf.pdf
PD - 95773BIRLR024ZPbFIRLU024ZPbFHEXFET Power MOSFETFeaturesn Logic LevelDn Advanced Process TechnologyVDSS = 55Vn Ultra Low On-Resistancen 175C Operating TemperatureRDS(on) = 58mn Fast SwitchingGn Repetitive Avalanche Allowed up to Tjmaxn Lead-Free ID = 16ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ext
7.4. Size:220K samsung
irlr024a.pdf
IRLR/U024AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.061 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra
7.5. Size:1198K vishay
irlr024 irlu024 sihlr024 sihlu024.pdf
IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single
7.6. Size:717K infineon
auirlr024z auirlu024z.pdf
AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De
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