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IRLR024N Specs and Replacement


   Type Designator: IRLR024N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO252
 

 IRLR024N substitution

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IRLR024N Specs

 ..1. Size:308K  international rectifier
irlr024npbf irlu024npbf.pdf pdf_icon

IRLR024N

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni... See More ⇒

 ..2. Size:162K  international rectifier
irlr024n.pdf pdf_icon

IRLR024N

PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.065 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowes... See More ⇒

 ..3. Size:241K  inchange semiconductor
irlr024n.pdf pdf_icon

IRLR024N

isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-... See More ⇒

 0.1. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

IRLR024N

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com... See More ⇒

Detailed specifications: IRLMS6702 , IRLMS6802 , IRLR010 , IRLR014 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , BS170 , IRLR110A , IRLR120A , IRLR120N , IRLR130A , IRLR210A , IRLR220A , IRLR230A , IRLR2703 .

Keywords - IRLR024N MOSFET specs

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