SSM9987GM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM9987GM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: SO-8

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SSM9987GM datasheet

 ..1. Size:192K  silicon standard
 ssm9987gm.pdf pdf_icon

SSM9987GM

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 Low Gate Charge BVDSS 80V D1 D1 Single Drive Requirement RDS(ON) 90m G2 Surface Mount Package S2 ID 3.5A G1 SO-8 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2 D1 provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi

 6.1. Size:192K  silicon standard
 ssm9987gh.pdf pdf_icon

SSM9987GM

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 80V D RDS(ON) 90m Low Gate Charge Single Drive Requirement ID 15A G Fast Switching Performance S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. G D S provide the designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and c

 8.1. Size:202K  silicon standard
 ssm9985gm.pdf pdf_icon

SSM9987GM

SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40V D Fast Switching Speed D D RDS(ON) 15m Surface Mount Package D ID 10A G S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

 8.2. Size:226K  silicon standard
 ssm9980m.pdf pdf_icon

SSM9987GM

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 80V D2 DSS D2 D1 Lower gate charge R 52m DS(ON) D1 Fast switching characteristics ID 4.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and

MOSTRAR MÁS

Otros transistores... SSM9977GH, SSM9977GJ, SSM9977GM, SSM9980GH, SSM9980GJ, SSM9980M, SSM9985GM, SSM9987GH, IRFP460, SSN1N45BBU, SSN1N45BTA, SSP3N90, SSP45N20B, SSP4N60B, SSP4N80, SSP5N90, SSR1N45