SSM9987GM Datasheet. Specs and Replacement

Type Designator: SSM9987GM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SO-8

SSM9987GM substitution

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SSM9987GM datasheet

 ..1. Size:192K  silicon standard
ssm9987gm.pdf pdf_icon

SSM9987GM

SSM9987GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 Low Gate Charge BVDSS 80V D1 D1 Single Drive Requirement RDS(ON) 90m G2 Surface Mount Package S2 ID 3.5A G1 SO-8 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D2 D1 provide the designer with the best combination of fast switching, ruggedized device design, lower on-resi... See More ⇒

 6.1. Size:192K  silicon standard
ssm9987gh.pdf pdf_icon

SSM9987GM

SSM9987GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY BVDSS 80V D RDS(ON) 90m Low Gate Charge Single Drive Requirement ID 15A G Fast Switching Performance S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. G D S provide the designer with the best combination of fast switching, TO-252(H) ruggedized device design, low on-resistance and c... See More ⇒

 8.1. Size:202K  silicon standard
ssm9985gm.pdf pdf_icon

SSM9987GM

SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance BVDSS 40V D Fast Switching Speed D D RDS(ON) 15m Surface Mount Package D ID 10A G S S SO-8 S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. D provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and... See More ⇒

 8.2. Size:226K  silicon standard
ssm9980m.pdf pdf_icon

SSM9987GM

SSM9980M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement BV 80V D2 DSS D2 D1 Lower gate charge R 52m DS(ON) D1 Fast switching characteristics ID 4.6A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G2 ruggedized device design, low on-resistance and ... See More ⇒

Detailed specifications: SSM9977GH, SSM9977GJ, SSM9977GM, SSM9980GH, SSM9980GJ, SSM9980M, SSM9985GM, SSM9987GH, IRFP460, SSN1N45BBU, SSN1N45BTA, SSP3N90, SSP45N20B, SSP4N60B, SSP4N80, SSP5N90, SSR1N45

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.