SSR1N60B Todos los transistores

 

SSR1N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSR1N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.9 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: D-PAK

 Búsqueda de reemplazo de MOSFET SSR1N60B

 

SSR1N60B Datasheet (PDF)

 ..1. Size:678K  fairchild semi
ssr1n60b ssr1n60btm ssu1n60b.pdf

SSR1N60B
SSR1N60B

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

 7.1. Size:196K  1
ssu1n60a ssr1n60a.pdf

SSR1N60B
SSR1N60B

 7.2. Size:502K  samsung
ssr1n60a.pdf

SSR1N60B
SSR1N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

 9.1. Size:197K  1
ssu1n50a ssr1n50a.pdf

SSR1N60B
SSR1N60B

 9.2. Size:104K  samsung
ssr1n45 ssu1n45.pdf

SSR1N60B
SSR1N60B

 9.3. Size:504K  samsung
ssr1n50a.pdf

SSR1N60B
SSR1N60B

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top

 


SSR1N60B
  SSR1N60B
  SSR1N60B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: FIR9N90FG | FIR9N65LG | FIR9N50FG | FIR96N08PG | FIR8N80FG | FIR8N70FG | FIR8N65FG | FIR8N60FG | FIR80N10LG | FIR80N08PG | FIR80N03LG | FIR7NS70ALG | FIR7NS70AFG | FIR7NS65AFG | FIR6N90FG | FIR6N70FG

 

 

 
Back to Top