SSS4N60B Todos los transistores

 

SSS4N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSS4N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de SSS4N60B MOSFET

   - Selección ⓘ de transistores por parámetros

 

SSS4N60B Datasheet (PDF)

 ..1. Size:888K  fairchild semi
 ssp4n60b sss4n60b.pdf pdf_icon

SSS4N60B

SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi

 7.1. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

SSS4N60B

 7.2. Size:501K  samsung
 sss4n60as.pdf pdf_icon

SSS4N60B

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 7.3. Size:1214K  shenzhen
 sss4n60.pdf pdf_icon

SSS4N60B

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60Technology co.,Ltd4 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS4N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance

MOSTRAR MÁS

Otros transistores... SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B , SSRK7002LT1G , IRFP250N , SSSF11NS65UF , SST174 , SST175 , SST176 , SST177 , SST4391 , SST4392 , SST4393 .

History: SIS612EDNT | IRL3705ZSPBF | IRL1004SPBF | SLF10N70C | SI7218DN | SJMN099R65SW | SSP80R380S2

 

 
Back to Top

 


 
.