SSS4N60B Datasheet. Specs and Replacement
Type Designator: SSS4N60B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
SSS4N60B substitution
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SSS4N60B datasheet
ssp4n60b sss4n60b.pdf
SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒
sss4n60as.pdf
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 2.037 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒
sss4n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance ... See More ⇒
Detailed specifications: SSP4N60B, SSP4N80, SSP5N90, SSR1N45, SSR1N60B, SSR1N60BTM, SSR2N60B, SSRK7002LT1G, IRFB4115, SSSF11NS65UF, SST174, SST175, SST176, SST177, SST4391, SST4392, SST4393
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