AFC4510S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFC4510S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: SOP-8P

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AFC4510S datasheet

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AFC4510S

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m @VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m @VGS=4.5V These devices are particularly suited for low P-Channel voltage p

 8.1. Size:810K  alfa-mos
 afc4516w.pdf pdf_icon

AFC4510S

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 8.2. Size:810K  alfa-mos
 afc4516.pdf pdf_icon

AFC4510S

AFC4516 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power manage

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4510S

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power

MOSTRAR MÁS

Otros transistores... AF15N50, AFC1016, AFC1539, AFC1563, AFC2519W, AFC3326WS, AFC3346W, AFC3366W, IRFB3607, AFC4516, AFC4516W, AFC4539S, AFC4539WS, AFC4559, AFC4599, AFC4604W, AFC5521