All MOSFET. AFC4510S Datasheet

 

AFC4510S Datasheet and Replacement


   Type Designator: AFC4510S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOP-8P
 

 AFC4510S substitution

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AFC4510S Datasheet (PDF)

 ..1. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4510S

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

 8.1. Size:810K  alfa-mos
 afc4516w.pdf pdf_icon

AFC4510S

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 8.2. Size:810K  alfa-mos
 afc4516.pdf pdf_icon

AFC4510S

AFC4516 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power manage

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4510S

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

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Datasheet: AF15N50 , AFC1016 , AFC1539 , AFC1563 , AFC2519W , AFC3326WS , AFC3346W , AFC3366W , IRFB3607 , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , AFC5521 .

Keywords - AFC4510S MOSFET datasheet

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