AFC4539S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFC4539S
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 75 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: SOP-8P
Búsqueda de reemplazo de AFC4539S MOSFET
AFC4539S Datasheet (PDF)
afc4539s.pdf

AFC4539S Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=40m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma
afc4539ws.pdf

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power
afc4599.pdf

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana
afc4510s.pdf

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p
Otros transistores... AFC1563 , AFC2519W , AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , IRLB4132 , AFC4539WS , AFC4559 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 .
History: BUK9K45-100E | VBA1311 | AP8600MT | HAF2011L
History: BUK9K45-100E | VBA1311 | AP8600MT | HAF2011L



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