Справочник MOSFET. AFC4539S

 

AFC4539S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFC4539S
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SOP-8P
     - подбор MOSFET транзистора по параметрам

 

AFC4539S Datasheet (PDF)

 ..1. Size:885K  alfa-mos
 afc4539s.pdf pdf_icon

AFC4539S

AFC4539S Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=40m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma

 7.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4539S

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.1. Size:988K  alfa-mos
 afc4599.pdf pdf_icon

AFC4539S

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.2. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4539S

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: OSG70R500PF | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2

 

 
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