AFN1012E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:587K alfa-mos
afn1012e.pdf pdf_icon

AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

7.1. Size:585K alfa-mos
afn1012.pdf pdf_icon

AFN1012 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.1. Size:608K alfa-mos
afn1024.pdf pdf_icon

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.2. Size:560K alfa-mos
afn1032.pdf pdf_icon

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low L

9.3. Size:672K alfa-mos
afn1072.pdf pdf_icon

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.4. Size:605K alfa-mos
afn1024e.pdf pdf_icon

AFN1024E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

9.5. Size:486K alfa-mos
afn10n60t220ft afn10n60t220t.pdf pdf_icon

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

9.6. Size:526K alfa-mos
afn10n65t220ft afn10n65t220t.pdf pdf_icon

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

9.7. Size:583K alfa-mos
afn1034.pdf pdf_icon

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m@VGS=1.8V These devices are particularly suited for low L

AFN1012E Datasheet (PDF)

Liste

Recientemente añadidas las descripciónes de los transistores:

Popular searches

AllTransistors(C)

AFN1012E Todos los transistores