AFN1032 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN1032  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm

Encapsulados: SOT-523

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AFN1032 datasheet

 ..1. Size:560K  alfa-mos
 afn1032.pdf pdf_icon

AFN1032

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low L

 8.1. Size:583K  alfa-mos
 afn1034.pdf pdf_icon

AFN1032

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m @VGS=1.8V These devices are particularly suited for low L

 9.1. Size:608K  alfa-mos
 afn1024.pdf pdf_icon

AFN1032

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L

 9.2. Size:672K  alfa-mos
 afn1072.pdf pdf_icon

AFN1032

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L

MOSTRAR MÁS

Otros transistores... AFN07N65T220FT, AFN07N65T220T, AFN08N50T220FT, AFN08N50T220T, AFN1012, AFN1012E, AFN1024, AFN1024E, STP65NF06, AFN1034, AFN1072, AFN10N60T220FT, AFN10N60T220T, AFN10N65T220FT, AFN10N65T220T, AFN12N60T220FT, AFN12N60T220T