All MOSFET. AFN1032 Datasheet

 

AFN1032 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN1032
   Marking Code: M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.4 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
   Package: SOT-523

 AFN1032 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN1032 Datasheet (PDF)

 ..1. Size:560K  alfa-mos
 afn1032.pdf

AFN1032 AFN1032

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low L

 8.1. Size:583K  alfa-mos
 afn1034.pdf

AFN1032 AFN1032

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m@VGS=1.8V These devices are particularly suited for low L

 9.1. Size:608K  alfa-mos
 afn1024.pdf

AFN1032 AFN1032

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 9.2. Size:672K  alfa-mos
 afn1072.pdf

AFN1032 AFN1032

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 9.3. Size:605K  alfa-mos
 afn1024e.pdf

AFN1032 AFN1032

AFN1024E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

 9.4. Size:587K  alfa-mos
 afn1012e.pdf

AFN1032 AFN1032

AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

 9.5. Size:486K  alfa-mos
 afn10n60t220ft afn10n60t220t.pdf

AFN1032 AFN1032

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

 9.6. Size:585K  alfa-mos
 afn1012.pdf

AFN1032 AFN1032

AFN1012 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 9.7. Size:526K  alfa-mos
 afn10n65t220ft afn10n65t220t.pdf

AFN1032 AFN1032

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 3SK16

 

 
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