AFN1306 Todos los transistores

 

AFN1306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN1306
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
   Paquete / Cubierta: SOT-323
 

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AFN1306 Datasheet (PDF)

 ..1. Size:799K  alfa-mos
 afn1306.pdf pdf_icon

AFN1306

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m@VGS=1.8V These devices are particularly suited for low S

 8.1. Size:592K  alfa-mos
 afn1304.pdf pdf_icon

AFN1306

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low S

 8.2. Size:593K  alfa-mos
 afn1304e.pdf pdf_icon

AFN1306

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low

 9.1. Size:270K  alfa-mos
 afn1330s.pdf pdf_icon

AFN1306

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

MOSTRAR MÁS

Otros transistores... AFN10N65T220FT , AFN10N65T220T , AFN12N60T220FT , AFN12N60T220T , AFN12N65T220FT , AFN12N65T220T , AFN1304 , AFN1304E , 2N7002 , AFN1330S , AFN1443 , AFN1501S , AFN1510S , AFN1520 , AFN1530 , AFN1912 , AFN1912E .

History: TT8K11 | 2SK2596 | APQ0DSN60AJ | NP82N055NHE | BSO200P03S

 

 
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