All MOSFET. AFN1306 Datasheet

 

AFN1306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN1306
   Marking Code: 06*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.4 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: SOT-323

 AFN1306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN1306 Datasheet (PDF)

 ..1. Size:799K  alfa-mos
 afn1306.pdf

AFN1306 AFN1306

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m@VGS=1.8V These devices are particularly suited for low S

 8.1. Size:592K  alfa-mos
 afn1304.pdf

AFN1306 AFN1306

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low S

 8.2. Size:593K  alfa-mos
 afn1304e.pdf

AFN1306 AFN1306

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m@VGS=1.8V These devices are particularly suited for low

 9.1. Size:270K  alfa-mos
 afn1330s.pdf

AFN1306 AFN1306

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5@VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5@VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APM4017PU

 

 
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