AFN1306 Datasheet. Specs and Replacement

Type Designator: AFN1306  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: SOT-323

AFN1306 substitution

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AFN1306 datasheet

 ..1. Size:799K  alfa-mos
 afn1306.pdf pdf_icon

AFN1306

AFN1306 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1306, N-Channel enhancement mode 30V/1.5A,RDS(ON)=430m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/1.2A,RDS(ON)=580m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.6A,RDS(ON)=860m @VGS=1.8V These devices are particularly suited for low S... See More ⇒

 8.1. Size:592K  alfa-mos
 afn1304.pdf pdf_icon

AFN1306

AFN1304 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low S... See More ⇒

 8.2. Size:593K  alfa-mos
 afn1304e.pdf pdf_icon

AFN1306

AFN1304E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1304E, N-Channel enhancement mode 20V/1.8A,RDS(ON)=400m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=680m @VGS=1.8V These devices are particularly suited for low ... See More ⇒

 9.1. Size:270K  alfa-mos
 afn1330s.pdf pdf_icon

AFN1306

AFN1330S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1330S, N-Channel enhancement mode 60V/0.5A , RDS(ON)=7.5 @VGS=10V MOSFET, uses Advanced Trench Technology 60V/0.05A , R DS(ON)=7.5 @VGS=5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒

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Detailed specifications: AFN10N65T220FT, AFN10N65T220T, AFN12N60T220FT, AFN12N60T220T, AFN12N65T220FT, AFN12N65T220T, AFN1304, AFN1304E, MMIS60R580P, AFN1330S, AFN1443, AFN1501S, AFN1510S, AFN1520, AFN1530, AFN1912, AFN1912E

Keywords - AFN1306 MOSFET specs

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