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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ411 P-CHANNEL SIGNAL MOS FET FOR SWITCHING The 2SJ411 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for power control switche... See More ⇒

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 0.15 (typ.) High forward transfer admittance Yfs = 7.7 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -100 V) Enhancement mode ... See More ⇒

Ordering number ENN5298A P-Channel Silicon MOSFET 2SJ418 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ418] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ418] 6.5 2.3 5.0 0.5 4 0.5 ... See More ⇒

Ordering number ENN5366A P-Channel Silicon MOSFET 2SJ413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2076B Low-voltage drive. [2SJ413] Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Gate 2 Drain 3 Source 5.45 5.45 SANYO TO-3PML Speci... See More ⇒

No. N 5 2 6 6 2SJ416 No. 526 6 52599 P MOS 2SJ416 4V Absolute Maximum Ratings / Ta=25 unit VDSS 30 V VGSS 20 V ... See More ⇒

Ordering number EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2116 2.5V drive. [2SJ419] 8 5 1 Source 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maxim... See More ⇒

Ordering number EN5267 P-Channel Silicon MOSFET 2SJ417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ417] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Gate 0.6 0.5 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ417] 6.5 2.3 5.0 0.5 4 0.5 ... See More ⇒

2SJ410 Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G ... See More ⇒