2SJ411 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ411
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29.8 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 580 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm
Тип корпуса: SP8
2SJ411 Datasheet (PDF)
2sj411.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche
2sj412.pdf
2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode:
2sj418.pdf
Ordering number:ENN5298AP-Channel Silicon MOSFET2SJ418Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ418]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ418]6.5 2.35.0 0.540.5
2sj413.pdf
Ordering number:ENN5366AP-Channel Silicon MOSFET2SJ413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2076B Low-voltage drive.[2SJ413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 2 31 : Gate2 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLSpeci
2sj416.pdf
No. N 5 2 6 62SJ416No. 526 652599 P MOS 2SJ416 4V Absolute Maximum Ratings / Ta=25 unit VDSS 30 V VGSS 20 V
2sj419.pdf
Ordering number:EN5313AP-Channel Silicon MOSFET2SJ419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ419]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim
2sj417.pdf
Ordering number:EN5267P-Channel Silicon MOSFET2SJ417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ417]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ417]6.5 2.35.0 0.540.5
2sj410.pdf
2SJ410Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00Jun 05, 2006 DescriptionHigh speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver OutlineRENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG
Другие MOSFET... 2SJ325 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2N60 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 .
