DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ411P-CHANNEL SIGNAL MOS FETFOR SWITCHINGThe 2SJ411 is a P-channel MOS FET of a vertical type and isPACKAGE DIMENSIONS (in mm)7.0 MAX. 1.2a switching element that can be directly driven by the output of anIC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for power control switche

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode:

Ordering number:ENN5298AP-Channel Silicon MOSFET2SJ418Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ418]6.52.35.00.540.850.71.20.6 0.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ418]6.5 2.35.0 0.540.5

Ordering number:ENN5366AP-Channel Silicon MOSFET2SJ413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2076B Low-voltage drive.[2SJ413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 2 31 : Gate2 : Drain3 : Source5.45 5.45 SANYO : TO-3PMLSpeci

No. N 5 2 6 62SJ416No. 526 652599 P MOS 2SJ416 4V Absolute Maximum Ratings / Ta=25 unit VDSS 30 V VGSS 20 V

Ordering number:EN5313AP-Channel Silicon MOSFET2SJ419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2116 2.5V drive.[2SJ419]8 51 : Source2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim

Ordering number:EN5267P-Channel Silicon MOSFET2SJ417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2083B 4V drive.[2SJ417]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ417]6.5 2.35.0 0.540.5

2SJ410Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00Jun 05, 2006 DescriptionHigh speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver OutlineRENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG