AFN2312 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN2312  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: SOT-23

  📄📄 Copiar 

 Búsqueda de reemplazo de AFN2312 MOSFET

- Selecciónⓘ de transistores por parámetros

 

AFN2312 datasheet

 ..1. Size:549K  alfa-mos
 afn2312.pdf pdf_icon

AFN2312

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe

 0.1. Size:681K  alfa-mos
 afn2312a.pdf pdf_icon

AFN2312

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Su

 8.1. Size:268K  alfa-mos
 afn2318.pdf pdf_icon

AFN2312

AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:400K  alfa-mos
 afn2318a.pdf pdf_icon

AFN2312

AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A, AFN2306AE, AFN2308, AFN2308A, IRF640N, AFN2312A, AFN2318, AFN2318A, AFN2324, AFN2324A, AFN2330, AFN2330A, AFN2336A