AFN2312 Datasheet. Specs and Replacement

Type Designator: AFN2312  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: SOT-23

AFN2312 substitution

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AFN2312 datasheet

 ..1. Size:549K  alfa-mos
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AFN2312

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 0.1. Size:681K  alfa-mos
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AFN2312

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒

 8.1. Size:268K  alfa-mos
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AFN2312

AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 8.2. Size:400K  alfa-mos
 afn2318a.pdf pdf_icon

AFN2312

AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

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Detailed specifications: AFN2304, AFN2304A, AFN2304AS, AFN2304S, AFN2306A, AFN2306AE, AFN2308, AFN2308A, IRF640N, AFN2312A, AFN2318, AFN2318A, AFN2324, AFN2324A, AFN2330, AFN2330A, AFN2336A

Keywords - AFN2312 MOSFET specs

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