All MOSFET. AFN2312 Datasheet

 

AFN2312 Datasheet and Replacement


   Type Designator: AFN2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOT-23
 

 AFN2312 substitution

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AFN2312 Datasheet (PDF)

 ..1. Size:549K  alfa-mos
 afn2312.pdf pdf_icon

AFN2312

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Supe

 0.1. Size:681K  alfa-mos
 afn2312a.pdf pdf_icon

AFN2312

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Su

 8.1. Size:268K  alfa-mos
 afn2318.pdf pdf_icon

AFN2312

AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:400K  alfa-mos
 afn2318a.pdf pdf_icon

AFN2312

AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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Datasheet: AFN2304 , AFN2304A , AFN2304AS , AFN2304S , AFN2306A , AFN2306AE , AFN2308 , AFN2308A , IRF640N , AFN2312A , AFN2318 , AFN2318A , AFN2324 , AFN2324A , AFN2330 , AFN2330A , AFN2336A .

History: AP2305N-HF | 2SK2483

Keywords - AFN2312 MOSFET datasheet

 AFN2312 cross reference
 AFN2312 equivalent finder
 AFN2312 lookup
 AFN2312 substitution
 AFN2312 replacement

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