AFN2318A Todos los transistores

 

AFN2318A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN2318A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: SOT-23
 

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AFN2318A Datasheet (PDF)

 ..1. Size:400K  alfa-mos
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AFN2318A

AFN2318A Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)= 68m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.2A,RDS(ON)= 88m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 7.1. Size:268K  alfa-mos
 afn2318.pdf pdf_icon

AFN2318A

AFN2318 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/2.8A,RDS(ON)= 80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.1. Size:549K  alfa-mos
 afn2312.pdf pdf_icon

AFN2318A

AFN2312 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=40m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Supe

 8.2. Size:681K  alfa-mos
 afn2312a.pdf pdf_icon

AFN2318A

AFN2312A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.2A,RDS(ON)=48m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Su

MOSTRAR MÁS

Otros transistores... AFN2304S , AFN2306A , AFN2306AE , AFN2308 , AFN2308A , AFN2312 , AFN2312A , AFN2318 , AON6414A , AFN2324 , AFN2324A , AFN2330 , AFN2330A , AFN2336A , AFN2354 , AFN2376 , AFN2604 .

History: IPB114N03LG | QM4302D | SM4066CSK

 

 
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