AFN3015S Todos los transistores

 

AFN3015S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3015S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de AFN3015S MOSFET

   - Selección ⓘ de transistores por parámetros

 

AFN3015S Datasheet (PDF)

 ..1. Size:863K  alfa-mos
 afn3015s.pdf pdf_icon

AFN3015S

AFN3015S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.8m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.1. Size:853K  alfa-mos
 afn3019s.pdf pdf_icon

AFN3015S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 8.2. Size:824K  alfa-mos
 afn3016s.pdf pdf_icon

AFN3015S

AFN3016S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3015S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

MOSTRAR MÁS

Otros transistores... AFN2330A , AFN2336A , AFN2354 , AFN2376 , AFN2604 , AFN2912W , AFN3006S , AFN3009S , IRLZ44N , AFN3016S , AFN3019S , AFN3025S , AFN3030 , AFN3302W , AFN3306WS , AFN3309WS , AFN3310W .

History: HGS095NE4SL | HGS098N10AL | HGT007NE6A

 

 
Back to Top

 


 
.