AFN3019S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3019S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-252

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AFN3019S datasheet

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AFN3019S

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 8.1. Size:863K  alfa-mos
 afn3015s.pdf pdf_icon

AFN3019S

AFN3015S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.8m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:824K  alfa-mos
 afn3016s.pdf pdf_icon

AFN3019S

AFN3016S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3019S

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

MOSTRAR MÁS

Otros transistores... AFN2354, AFN2376, AFN2604, AFN2912W, AFN3006S, AFN3009S, AFN3015S, AFN3016S, STP75NF75, AFN3025S, AFN3030, AFN3302W, AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, AFN3400