AFN3302W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3302W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: DFN3X3

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AFN3302W datasheet

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AFN3302W

AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m @VGS=1.8V These devices are particularly suited for low Super

 8.1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3302W

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.2. Size:596K  alfa-mos
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AFN3302W

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3302W

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN2912W, AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, AFN3030, IRF4905, AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, AFN3400S