Справочник MOSFET. AFN3302W

 

AFN3302W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN3302W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: DFN3X3
 

 Аналог (замена) для AFN3302W

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3302W Datasheet (PDF)

 ..1. Size:577K  alfa-mos
 afn3302w.pdf pdf_icon

AFN3302W

AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V These devices are particularly suited for low Super

 8.1. Size:588K  alfa-mos
 afn3309ws.pdf pdf_icon

AFN3302W

AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.2. Size:596K  alfa-mos
 afn3306ws.pdf pdf_icon

AFN3302W

AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:498K  alfa-mos
 afn3310w.pdf pdf_icon

AFN3302W

AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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Другие MOSFET... AFN2912W , AFN3006S , AFN3009S , AFN3015S , AFN3016S , AFN3019S , AFN3025S , AFN3030 , IRF4905 , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A , AFN3400AS , AFN3400S .

History: MTW33N10E | SWMN10N65D | NTB75N03R | MTM4N50 | AOB2918L | MX2N4091

 

 
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