IRLS530A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRLS530A Datasheet (PDF)

..1. Size:945K samsung
irls530a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

9.1. Size:892K samsung
irls520a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

9.2. Size:889K samsung
irls510a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

9.3. Size:938K samsung
irls540a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .