All MOSFET. IRLS530A Datasheet

 

IRLS530A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLS530A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 10.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16.9 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220F

 IRLS530A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLS530A Datasheet (PDF)

 ..1. Size:945K  samsung
irls530a.pdf

IRLS530A
IRLS530A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratings

 9.1. Size:892K  samsung
irls520a.pdf

IRLS530A
IRLS530A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.2. Size:889K  samsung
irls510a.pdf

IRLS530A
IRLS530A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

 9.3. Size:938K  samsung
irls540a.pdf

IRLS530A
IRLS530A

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top