AFN3400S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3400S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm

Encapsulados: SOT-23

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AFN3400S datasheet

 ..1. Size:550K  alfa-mos
 afn3400s.pdf pdf_icon

AFN3400S

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Sup

 7.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3400S

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 7.2. Size:682K  alfa-mos
 afn3400as.pdf pdf_icon

AFN3400S

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low 3

 7.3. Size:710K  alfa-mos
 afn3400a.pdf pdf_icon

AFN3400S

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V These devices are particularly suited for low 30V

MOSTRAR MÁS

Otros transistores... AFN3302W, AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, K4145, AFN3402, AFN3402A, AFN3404, AFN3406, AFN3406A, AFN3406AS, AFN3406S, AFN3410