All MOSFET. AFN3400S Datasheet

 

AFN3400S Datasheet and Replacement


   Type Designator: AFN3400S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOT-23
 

 AFN3400S substitution

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AFN3400S Datasheet (PDF)

 ..1. Size:550K  alfa-mos
 afn3400s.pdf pdf_icon

AFN3400S

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Sup

 7.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3400S

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 7.2. Size:682K  alfa-mos
 afn3400as.pdf pdf_icon

AFN3400S

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low 3

 7.3. Size:710K  alfa-mos
 afn3400a.pdf pdf_icon

AFN3400S

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V These devices are particularly suited for low 30V

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Datasheet: AFN3302W , AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A , AFN3400AS , IRFB3607 , AFN3402 , AFN3402A , AFN3404 , AFN3406 , AFN3406A , AFN3406AS , AFN3406S , AFN3410 .

History: TPCS8204 | AFP1073 | GT52N10D5 | TK22E10N1 | AFN04N60T220FT | PHN210T | HAT1123R

Keywords - AFN3400S MOSFET datasheet

 AFN3400S cross reference
 AFN3400S equivalent finder
 AFN3400S lookup
 AFN3400S substitution
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