AFN3402 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3402  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT-23

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AFN3402 datasheet

 ..1. Size:563K  alfa-mos
 afn3402.pdf pdf_icon

AFN3402

AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V These devices are particularly suited for low Supe

 0.1. Size:604K  alfa-mos
 afn3402a.pdf pdf_icon

AFN3402

AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m @VGS=2.5V These devices are particularly suited for low Su

 8.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3402

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:710K  alfa-mos
 afn3406as.pdf pdf_icon

AFN3402

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS, AFN3400S, 13N50, AFN3402A, AFN3404, AFN3406, AFN3406A, AFN3406AS, AFN3406S, AFN3410, AFN3414