AFN3402 Todos los transistores

 

AFN3402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SOT-23
 

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AFN3402 Datasheet (PDF)

 ..1. Size:563K  alfa-mos
 afn3402.pdf pdf_icon

AFN3402

AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m@VGS=2.5V These devices are particularly suited for low Supe

 0.1. Size:604K  alfa-mos
 afn3402a.pdf pdf_icon

AFN3402

AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Su

 8.1. Size:578K  alfa-mos
 afn3400.pdf pdf_icon

AFN3402

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:710K  alfa-mos
 afn3406as.pdf pdf_icon

AFN3402

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFN3306WS , AFN3309WS , AFN3310W , AFN3316W , AFN3400 , AFN3400A , AFN3400AS , AFN3400S , AO4407 , AFN3402A , AFN3404 , AFN3406 , AFN3406A , AFN3406AS , AFN3406S , AFN3410 , AFN3414 .

History: CS9945BEY | NX3020NAKW | FQB4N20TM | AFN3406 | IRF2804L | NCEP0116AS

 

 
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