AFN3402 datasheet, подбор замены

 ..1. Size:563K  alfa-mos
 afn3402.pdf 

AFN3402 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=80m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V These devices are particularly suited for low Supe

 0.1. Size:604K  alfa-mos
 afn3402a.pdf 

AFN3402A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=87m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m @VGS=2.5V These devices are particularly suited for low Su

 8.1. Size:578K  alfa-mos
 afn3400.pdf 

AFN3400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.8A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:710K  alfa-mos
 afn3406as.pdf 

AFN3406AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.4A,RDS(ON)=55m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.3. Size:550K  alfa-mos
 afn3400s.pdf 

AFN3400S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.6A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Sup

 8.4. Size:710K  alfa-mos
 afn3406a.pdf 

AFN3406A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.5. Size:578K  alfa-mos
 afn3406.pdf 

AFN3406 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.6. Size:682K  alfa-mos
 afn3400as.pdf 

AFN3400AS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=46m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low 3

 8.7. Size:578K  alfa-mos
 afn3406s.pdf 

AFN3406S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.5A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.8. Size:710K  alfa-mos
 afn3400a.pdf 

AFN3400A Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/1.8A,RDS(ON)=58m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V These devices are particularly suited for low 30V

 8.9. Size:562K  alfa-mos
 afn3404.pdf 

AFN3404 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.2A,RDS(ON)=34m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.10. Size:849K  cn vbsemi
 afn3404s23rg.pdf 

AFN3404S23RG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23