AFN3458 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3458  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TSOP-6

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AFN3458 datasheet

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AFN3458

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:498K  alfa-mos
 afn3458bw.pdf pdf_icon

AFN3458

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.1. Size:574K  alfa-mos
 afn3452.pdf pdf_icon

AFN3458

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m @VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:278K  alfa-mos
 afn3454.pdf pdf_icon

AFN3458

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN3430W, AFN3432, AFN3436, AFN3446, AFN3452, AFN3454, AFN3456, AFN3456S, SI2302, AFN3458BW, AFN3460, AFN3466, AFN3484, AFN3484S, AFN3606S, AFN3609S, AFN3630