AFN3458 Todos los transistores

 

AFN3458 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3458
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TSOP-6
     - Selección de transistores por parámetros

 

AFN3458 Datasheet (PDF)

 ..1. Size:570K  alfa-mos
 afn3458.pdf pdf_icon

AFN3458

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:498K  alfa-mos
 afn3458bw.pdf pdf_icon

AFN3458

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.1. Size:574K  alfa-mos
 afn3452.pdf pdf_icon

AFN3458

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:278K  alfa-mos
 afn3454.pdf pdf_icon

AFN3458

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN3430W , AFN3432 , AFN3436 , AFN3446 , AFN3452 , AFN3454 , AFN3456 , AFN3456S , IRFZ46N , AFN3458BW , AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AFN3609S , AFN3630 .

History: 2SK3947 | WFY3N02 | APT904R2AN | IRLU7843 | SVF7N60CF | IRF7309IPBF | FQD10N20LTF

 

 
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