All MOSFET. AFN3458 Datasheet

 

AFN3458 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN3458
   Marking Code: 58*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP-6

 AFN3458 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN3458 Datasheet (PDF)

 ..1. Size:570K  alfa-mos
 afn3458.pdf

AFN3458 AFN3458

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:498K  alfa-mos
 afn3458bw.pdf

AFN3458 AFN3458

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.1. Size:574K  alfa-mos
 afn3452.pdf

AFN3458 AFN3458

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:278K  alfa-mos
 afn3454.pdf

AFN3458 AFN3458

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.3. Size:574K  alfa-mos
 afn3456.pdf

AFN3458 AFN3458

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.4. Size:677K  alfa-mos
 afn3456s.pdf

AFN3458 AFN3458

AFN3456S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.8A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APM4820K | BSZ014NE2LS5IF | 2SK4047-01S

 

 
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