AFN3458BW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN3458BW
   Código: 58B*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 4 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 38 pF
   Resistencia entre drenaje y fuente RDS(on): 0.135 Ohm
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de MOSFET AFN3458BW

AFN3458BW Datasheet (PDF)

..1. Size:498K alfa-mos
afn3458bw.pdf

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

7.1. Size:570K alfa-mos
afn3458.pdf

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

8.1. Size:574K alfa-mos
afn3452.pdf

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

8.2. Size:278K alfa-mos
afn3454.pdf

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

8.3. Size:574K alfa-mos
afn3456.pdf

AFN3456 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

8.4. Size:677K alfa-mos
afn3456s.pdf

AFN3456S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.8A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: