AFN3458BW - аналоги и даташиты транзистора

 

AFN3458BW - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AFN3458BW
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TSOP-6
 

 Аналог (замена) для AFN3458BW

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN3458BW Datasheet (PDF)

 ..1. Size:498K  alfa-mos
 afn3458bw.pdf pdf_icon

AFN3458BW

AFN3458BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 7.1. Size:570K  alfa-mos
 afn3458.pdf pdf_icon

AFN3458BW

AFN3458 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.8A,RDS(ON)=66m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:574K  alfa-mos
 afn3452.pdf pdf_icon

AFN3458BW

AFN3452 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.2A,RDS(ON)=52m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m@VGS=2.5V These devices are particularly suited for low Super

 8.2. Size:278K  alfa-mos
 afn3454.pdf pdf_icon

AFN3458BW

AFN3454 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3480, N-Channel enhancement mode 40V/5.6A,RDS(ON)= 54m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)= 74m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Другие MOSFET... AFN3432 , AFN3436 , AFN3446 , AFN3452 , AFN3454 , AFN3456 , AFN3456S , AFN3458 , 4N60 , AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AFN3609S , AFN3630 , AFN3684S .

History: AFN3484 | SIHFD9014 | BL80N20L-F | FQP3N80 | SPI80N06S-08 | IPB60R040C7 | SIHFD420

 

 
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