AFN4134W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4134W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: SOP-8P

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AFN4134W datasheet

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AFN4134W

AFN4134W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 7.1. Size:481K  alfa-mos
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AFN4134W

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:571K  alfa-mos
 afn4172s.pdf pdf_icon

AFN4134W

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:504K  alfa-mos
 afn4102w.pdf pdf_icon

AFN4134W

AFN4102W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=175m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

MOSTRAR MÁS

Otros transistores... AFN3609S, AFN3630, AFN3684S, AFN3806W, AFN3814W, AFN4048WS, AFN4102W, AFN4134, IRF1405, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, AFN4214W, AFN4228, AFN4248W