AFN4134W Datasheet. Specs and Replacement

Type Designator: AFN4134W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SOP-8P

AFN4134W substitution

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AFN4134W datasheet

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AFN4134W

AFN4134W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 7.1. Size:481K  alfa-mos
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AFN4134W

AFN4134 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.1. Size:571K  alfa-mos
 afn4172s.pdf pdf_icon

AFN4134W

AFN4172S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4172S, N-Channel enhancement mode 30V/15A,RDS(ON)=12m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=15m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 9.2. Size:504K  alfa-mos
 afn4102w.pdf pdf_icon

AFN4134W

AFN4102W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4102W, N-Channel enhancement mode 100V/3.8A,RDS(ON)=158m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=175m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit... See More ⇒

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Detailed specifications: AFN3609S, AFN3630, AFN3684S, AFN3806W, AFN3814W, AFN4048WS, AFN4102W, AFN4134, IRF1405, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, AFN4214W, AFN4228, AFN4248W

Keywords - AFN4134W MOSFET specs

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