AFN4214 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4214  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP-8P

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AFN4214 datasheet

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AFN4214

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

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AFN4214

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

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AFN4214

AFN4210W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=40m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 8.2. Size:577K  alfa-mos
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AFN4214

AFN4210 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN4048WS, AFN4102W, AFN4134, AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W, IRLB3034, AFN4214W, AFN4228, AFN4248W, AFN4412, AFN4412W, AFN4422, AFN4424, AFN4424W