AFN4214 - параметры транзистора MOSFET, его аналоги, datasheet

AFN4214 Datasheet (PDF)

..1. Size:482K alfa-mos
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AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

0.1. Size:483K alfa-mos
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AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

8.1. Size:578K alfa-mos
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AFN4210W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210W, N-Channel enhancement mode 30V/6.8A,RDS(ON)=32m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=40m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

8.2. Size:577K alfa-mos
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AFN4210 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4210, N-Channel enhancement mode 30V/6.8A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.6A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .