AFN4424 Todos los transistores

 

AFN4424 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN4424
   Código: 4424
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOP-8P
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AFN4424 Datasheet (PDF)

 ..1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4424

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 0.1. Size:575K  alfa-mos
 afn4424w.pdf pdf_icon

AFN4424

AFN4424W Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424W, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:576K  alfa-mos
 afn4422.pdf pdf_icon

AFN4424

AFN4422 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Su

 9.1. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4424

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1279 | IRL3714LPBF

 

 
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