AFN4424
MOSFET. Datasheet pdf. Equivalent
Type Designator: AFN4424
Marking Code: 4424
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 110
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
SOP-8P
AFN4424
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AFN4424
Datasheet (PDF)
..1. Size:574K alfa-mos
afn4424.pdf 
AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
0.1. Size:575K alfa-mos
afn4424w.pdf
AFN4424W Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424W, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
8.1. Size:576K alfa-mos
afn4422.pdf
AFN4422 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Su
9.1. Size:600K alfa-mos
afn4440w.pdf
AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.2. Size:578K alfa-mos
afn4486.pdf
AFN4486 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4486, N-Channel enhancement mode 20V/ 9A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 7A,RDS(ON)=17m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m@VGS=1.8V These devices are particularly suited for low Super h
9.3. Size:599K alfa-mos
afn4440.pdf
AFN4440 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.4. Size:576K alfa-mos
afn4412w.pdf
AFN4412W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412W, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.5. Size:576K alfa-mos
afn4412.pdf
AFN4412 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4412, N-Channel enhancement mode 30V/ 7.6A,RDS(ON)=35m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.2A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
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