AFN4850WS Todos los transistores

 

AFN4850WS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN4850WS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP-8P
 
   - Selección ⓘ de transistores por parámetros

 

AFN4850WS Datasheet (PDF)

 ..1. Size:580K  alfa-mos
 afn4850ws.pdf pdf_icon

AFN4850WS

AFN4850WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=20m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/7.2A,RDS(ON)=28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:515K  alfa-mos
 afn4822ws.pdf pdf_icon

AFN4850WS

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:537K  alfa-mos
 afn4804.pdf pdf_icon

AFN4850WS

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:515K  alfa-mos
 afn4822s.pdf pdf_icon

AFN4850WS

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... AFN4440W , AFN4486 , AFN4546 , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , 20N60 , AFN4874WS , AFN4896 , AFN4900W , AFN4906 , AFN4922W , AFN4924 , AFN4924W , AFN4936S .

History: AUIRFS8408 | STD5NK52ZD-1

 

 
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