All MOSFET. AFN4850WS Datasheet

 

AFN4850WS Datasheet and Replacement


   Type Designator: AFN4850WS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8P
 

 AFN4850WS substitution

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AFN4850WS Datasheet (PDF)

 ..1. Size:580K  alfa-mos
 afn4850ws.pdf pdf_icon

AFN4850WS

AFN4850WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=20m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/7.2A,RDS(ON)=28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:515K  alfa-mos
 afn4822ws.pdf pdf_icon

AFN4850WS

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:537K  alfa-mos
 afn4804.pdf pdf_icon

AFN4850WS

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:515K  alfa-mos
 afn4822s.pdf pdf_icon

AFN4850WS

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

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Datasheet: AFN4440W , AFN4486 , AFN4546 , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , 20N60 , AFN4874WS , AFN4896 , AFN4900W , AFN4906 , AFN4922W , AFN4924 , AFN4924W , AFN4936S .

History: NCE1520KA

Keywords - AFN4850WS MOSFET datasheet

 AFN4850WS cross reference
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