AFN4946
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN4946
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 6.8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12
nS
Cossⓘ - Capacitancia
de salida: 85
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042
Ohm
Paquete / Cubierta:
SOP-8P
- Selección de transistores por parámetros
AFN4946
Datasheet (PDF)
..1. Size:600K alfa-mos
afn4946.pdf 
AFN4946 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
0.1. Size:602K alfa-mos
afn4946w.pdf
AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
0.2. Size:601K alfa-mos
afn4946bw.pdf
AFN4946BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=65m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.1. Size:576K alfa-mos
afn4924.pdf
AFN4924 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
9.2. Size:574K alfa-mos
afn4996.pdf
AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.3. Size:575K alfa-mos
afn4997.pdf
AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.4. Size:583K alfa-mos
afn4998w.pdf
AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
9.5. Size:498K alfa-mos
afn4900w.pdf
AFN4900W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4900W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=140m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.6. Size:576K alfa-mos
afn4924w.pdf
AFN4924W Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924W, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.7. Size:583K alfa-mos
afn4922w.pdf
AFN4922W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.5A,RDS(ON)=300m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit
9.8. Size:280K alfa-mos
afn4906.pdf
AFN4906 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4906, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/5.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
9.9. Size:464K alfa-mos
afn4936s.pdf
AFN4936S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4936S, N-Channel enhancement mode 30V/5.0A,RDS(ON)=24m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.7A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
9.10. Size:582K alfa-mos
afn4998.pdf
AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.11. Size:464K alfa-mos
afn4936ws.pdf
AFN4936WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4936WS, N-Channel enhancement mode 30V/5.0A,RDS(ON)=24m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.7A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
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