Справочник MOSFET. AFN4946

 

AFN4946 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN4946
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 85 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
   Тип корпуса: SOP-8P
     - подбор MOSFET транзистора по параметрам

 

AFN4946 Datasheet (PDF)

 ..1. Size:600K  alfa-mos
 afn4946.pdf pdf_icon

AFN4946

AFN4946 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 0.1. Size:602K  alfa-mos
 afn4946w.pdf pdf_icon

AFN4946

AFN4946W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=48m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 0.2. Size:601K  alfa-mos
 afn4946bw.pdf pdf_icon

AFN4946

AFN4946BW Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4946BW, N-Channel enhancement mode 60V/6.8A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=65m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:576K  alfa-mos
 afn4924.pdf pdf_icon

AFN4946

AFN4924 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

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History: IRF241 | NCE70T180D

 

 
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