AFN5808W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN5808W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Paquete / Cubierta: DFN2X5
AFN5808W Datasheet (PDF)
afn5808w.pdf
AFN5808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=38m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Su
afn5800.pdf
AFN5800 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800, N-Channel enhancement mode 20V/7.0A,RDS(ON)=23m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/6.0A,RDS(ON)=25m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.5A,RDS(ON)=28m@VGS=1.8V These devices are particularly suited for low Supe
afn5800w.pdf
AFN5800W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800W, N-Channel enhancement mode 20V/8.0A,RDS(ON)=19m@VGS=10V MOSFET, uses Advanced Trench Technology 20V/7.0A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/6.0A,RDS(ON)=24m@VGS=2.5V These devices are particularly suited for low 20V
Otros transistores... AFN4996 , AFN4997 , AFN4998 , AFN4998W , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , STP75NF75 , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S .
History: NTJD4401N
History: NTJD4401N
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