AFN5808W Datasheet and Replacement
Type Designator: AFN5808W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: DFN2X5
AFN5808W substitution
AFN5808W Datasheet (PDF)
afn5808w.pdf

AFN5808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=38m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Su
afn5800.pdf

AFN5800 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800, N-Channel enhancement mode 20V/7.0A,RDS(ON)=23m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/6.0A,RDS(ON)=25m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.5A,RDS(ON)=28m@VGS=1.8V These devices are particularly suited for low Supe
afn5800w.pdf

AFN5800W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800W, N-Channel enhancement mode 20V/8.0A,RDS(ON)=19m@VGS=10V MOSFET, uses Advanced Trench Technology 20V/7.0A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/6.0A,RDS(ON)=24m@VGS=2.5V These devices are particularly suited for low 20V
Datasheet: AFN4996 , AFN4997 , AFN4998 , AFN4998W , AFN5004S , AFN501DEA , AFN5800 , AFN5800W , STP75NF75 , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , AFN6424S , AFN6520S , AFN6530S .
History: FQT7N10TF | AON7422G | IRFBF30PBF | 2SK3386-Z | AP6P025I | TSM2323CX | FQU2N80
Keywords - AFN5808W MOSFET datasheet
AFN5808W cross reference
AFN5808W equivalent finder
AFN5808W lookup
AFN5808W substitution
AFN5808W replacement
History: FQT7N10TF | AON7422G | IRFBF30PBF | 2SK3386-Z | AP6P025I | TSM2323CX | FQU2N80



LIST
Last Update
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940 | 2sc627 | 2sc680