AFN5808W Datasheet. Specs and Replacement
Type Designator: AFN5808W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: DFN2X5
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AFN5808W substitution
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AFN5808W datasheet
afn5808w.pdf
AFN5808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=38m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒
afn5800.pdf
AFN5800 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800, N-Channel enhancement mode 20V/7.0A,RDS(ON)=23m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/6.0A,RDS(ON)=25m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.5A,RDS(ON)=28m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒
afn5800w.pdf
AFN5800W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800W, N-Channel enhancement mode 20V/8.0A,RDS(ON)=19m @VGS=10V MOSFET, uses Advanced Trench Technology 20V/7.0A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/6.0A,RDS(ON)=24m @VGS=2.5V These devices are particularly suited for low 20V... See More ⇒
Detailed specifications: AFN4996, AFN4997, AFN4998, AFN4998W, AFN5004S, AFN501DEA, AFN5800, AFN5800W, 7N65, AFN5904W, AFN5908W, AFN6011S, AFN6018S, AFN6202S, AFN6424S, AFN6520S, AFN6530S
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