AFN5808W Datasheet and Replacement. Cross Reference Search

AFN5808W Datasheet (PDF)

..1. Size:597K alfa-mos
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AFN5808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=38m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Su

8.1. Size:598K alfa-mos
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AFN5800 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800, N-Channel enhancement mode 20V/7.0A,RDS(ON)=23m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/6.0A,RDS(ON)=25m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.5A,RDS(ON)=28m@VGS=1.8V These devices are particularly suited for low Supe

8.2. Size:599K alfa-mos
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AFN5800W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN5800W, N-Channel enhancement mode 20V/8.0A,RDS(ON)=19m@VGS=10V MOSFET, uses Advanced Trench Technology 20V/7.0A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/6.0A,RDS(ON)=24m@VGS=2.5V These devices are particularly suited for low 20V

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .