AFN6520S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN6520S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de AFN6520S MOSFET
AFN6520S Datasheet (PDF)
afn6520s.pdf

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f
afn6562.pdf

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super
afn6530s.pdf

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn6561.pdf

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
Otros transistores... AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , AFN6424S , K4145 , AFN6530S , AFN6561 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS , AFN7002KAS .
History: P062ABDD | IRFS7534PBF | NCE65N520D | SVF2N60CD | PSMN3R0-30YL | PJW1NA50 | IRFH5106PBF
History: P062ABDD | IRFS7534PBF | NCE65N520D | SVF2N60CD | PSMN3R0-30YL | PJW1NA50 | IRFH5106PBF



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