AFN6520S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN6520S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm

Encapsulados: DFN5X6-8L

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AFN6520S datasheet

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AFN6520S

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

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 afn6562.pdf pdf_icon

AFN6520S

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m @VGS=2.5V These devices are particularly suited for low Super

 9.2. Size:571K  alfa-mos
 afn6530s.pdf pdf_icon

AFN6520S

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:579K  alfa-mos
 afn6561.pdf pdf_icon

AFN6520S

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN5800W, AFN5808W, AFN5904W, AFN5908W, AFN6011S, AFN6018S, AFN6202S, AFN6424S, 2N7002, AFN6530S, AFN6561, AFN6562, AFN6820, AFN6830, AFN7002AS, AFN7002DS, AFN7002KAS