All MOSFET. AFN6520S Datasheet

 

AFN6520S Datasheet and Replacement


   Type Designator: AFN6520S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: DFN5X6-8L
 
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AFN6520S Datasheet (PDF)

 ..1. Size:549K  alfa-mos
 afn6520s.pdf pdf_icon

AFN6520S

AFN6520S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6520S, N-Channel enhancement mode 30V/16A,RDS(ON)=7.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/13A,RDS(ON)=12.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.1. Size:579K  alfa-mos
 afn6562.pdf pdf_icon

AFN6520S

AFN6562 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6562, N-Channel enhancement mode 30V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=78m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=95m@VGS=2.5V These devices are particularly suited for low Super

 9.2. Size:571K  alfa-mos
 afn6530s.pdf pdf_icon

AFN6520S

AFN6530S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=6.2m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:579K  alfa-mos
 afn6561.pdf pdf_icon

AFN6520S

AFN6561 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN6561, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=102m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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Datasheet: AFN5800W , AFN5808W , AFN5904W , AFN5908W , AFN6011S , AFN6018S , AFN6202S , AFN6424S , K4145 , AFN6530S , AFN6561 , AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS , AFN7002KAS .

Keywords - AFN6520S MOSFET datasheet

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