AFN7402 Todos los transistores

 

AFN7402 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN7402
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT-323
 

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AFN7402 Datasheet (PDF)

 ..1. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7402

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m@VGS=1.8V These devices are particularly suited for low Supe

 8.1. Size:569K  alfa-mos
 afn7400.pdf pdf_icon

AFN7402

AFN7400 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7400, N-Channel enhancement mode 30V/3.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.0A,RDS(ON)=90m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=102m@VGS=2.5V These devices are particularly suited for low Supe

 9.1. Size:583K  alfa-mos
 afn7420.pdf pdf_icon

AFN7402

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7402

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m@VGS=1.8V These devices are particularly suited for low Supe

MOSTRAR MÁS

Otros transistores... AFN6562 , AFN6820 , AFN6830 , AFN7002AS , AFN7002DS , AFN7002KAS , AFN7106S , AFN7400 , TK10A60D , AFN7412 , AFN7420 , AFN7424S , AFN7472S , AFN8205 , AFN8411 , AFN8412 , AFN8439 .

History: NTJS4405NT1 | AOB409L | SHD225628 | HTD2K4P15T | HM1607D | NCE85H21C

 

 
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